PRELIMINARY

FPD10000AF

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Revised: 12/07/04

Fax: +1 408 850-5766

Email: sales@filcsi.com

•

PERFORMANCE (1.8 GHz)

♦ -44 dBc WCDMA ACPR at 30 dBm output power

♦ 55% Power-Added Efficiency

♦ Evaluation Boards Available

♦ Additional Design Data Available on Website

♦ Usable Gain to 3.8GHz

•

DESCRIPTION AND APPLICATIONS

The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-

mount package has been optimized for low electrical parasitics and optimal heatsinking.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

•

ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Class B Operation

40

dBm

Power Gain at dB Gain Compression

10

11

dB

MSG

16.5

18.0

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

55

%

Adjacent Channel Power Ratio

WCDMA BTS Forward (64 channels)

10.15 dB Pk/Avg 0.001%

ACPR

Channel power = 30 dBm

-44

dBc

Saturated Drain-Source Current

5.2

A

Gate-Source Leakage Current

3

mA

Pinch-Off Voltage

1.1

V

Gate-Drain Breakdown Voltage

30

35

V

Thermal Resistivity (channel-to-case)

See Note on following page

3.5

°C/W

SEE PACKAGE

OUTLINE FOR

MARKING CODE