IXTC13N50 datasheet(1/2 Pages) ISC

部品番号	IXTC13N50

部品情報	isc N-Channel MOSFET Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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isc N-Channel MOSFET Transistor

IXTC13N50

·

FEATURES

·

Drain Source Voltage-

: VDSS= 500V(Min)

·

Static drain-source on-resistance

: RDS(on) ≤ 400mΩ@VGS=10V

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·

APPLICATION

·

DC/DC Converter

·

Ideal for high-frequency switching and synchronous rectification

·

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

500

V

VGS

Gate-Source Voltage

±

20

V

ID

Drain Current-Continuous

12

A

IDM

Drain Current-Single Pulsed

48

A

PD

Total Dissipation @TC=25℃

140

W

Tj

Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

·

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth(j-c)

Junction-to-case thermal resistance

0.9

℃

/W

同様の部品番号 - IXTC13N50

メーカー	部品番号	データシート	部品情報
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