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IRFP470 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFP470 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFP470 · FEATURES · With TO-247 packaging · High speed switching · Standard level gate drive · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Power supply · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Pulsed 96 A PD Total Dissipation 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.42 ℃ /W |
同様の部品番号 - IRFP470 |
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同様の説明 - IRFP470 |
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