PJM50H30NTH datasheet(1/6 Pages) PJSEMI

部品番号	PJM50H30NTH

部品情報	N-Channel Power MOSFET

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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PJM50H30NTH

N-Channel Power MOSFET

www.pingjingsemi.com

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Revision：1.0 Dec-2017

Features



Advanced Planar Process



RDS(ON), typ.=150mΩ@VGS=10V



Low Gate Charge Minimize Switching Loss



Rugged Poly Silicon Gate Structure

Applications



BLDC Motor Driver



Electric Welder



High Efficiency SMPS

Absolute Maximum Ratings

Ratings at TC = 25℃ unless otherwise specified.

Parameter

Symbol

Value

Units

Drain-to-Source Voltage

VDS

500

V

Continuous Drain Current

ID

30

A

TC=100 ℃

18

Pulsed Drain Current Note 1

IDM

120

A

Gate-to-Source Voltage

VGS

±30

V

Single Pulse Avalanche Energy

EAS

2000

mJ

Peak Diode Recovery Note 2

dv/dt

5.0

V/ns

Power Dissipation

PD

333

W

Derating Factor above 25°C

2.63

W/℃

Operating Junction and Storage Temperature Range

TSTG

–55 to 150

℃

Maximum Temperature for Soldering

TL

300

℃

Note: 1. Repetitive rating; pulse width limited by maximum junction temperature.

2. Package limited current.

3. Pulse width≤380μs; duty cycle≤2%.

TO-3PN

D

G

S

G

D

S

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