PJM2319PSA datasheet(2/8 Pages) PJSEMI

2 / 8 page

PJM2319PSA

P-Enhancement Field Effect Transistor

www.pingjingsemi.com

2 / 8

Revision：1.0 Mar-2018

Electrical Characteristics

Ratings at TJ = 25℃ unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static Characteristics

Drain-to-Source Breakdown Voltage

-BVDSS

VGS = 0 V, ID = -250uA

Zero Gate Voltage Drain Current

-IDSS

VDS =-40 V, VGS = 0V

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20V

±100

Gate Threshold Voltage Note3

-VGS(th)

VGS = VDS, ID = -250uA

Drain-to-Source On-Resistance Note3

RDS(on)

VGS = -10V, ID = -3.1A

mΩ

VGS = -4.5V, ID = -2.6A

120

Forward Transconductance Note3

gFS

VDS = -15 V, ID = -3.1A

Dynamic Characteristics

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = -20 V

595

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS =-20V, VGS =-4.5V,

ID = -3.1A

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

3.2

Turn-On Delay Time

td(on)

VDS =-20V, ID=-2.5A,

VGEN =-10V, RL =8Ω,

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode Characteristics

Body Diode Voltage

-VSD

IS=-2.5A, VGS=0V

0.8

1.5

Continuous Source-Drain Diode Current

-IS

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface mounted on FR4 board，t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

PJM2319PSA データシート(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

PJM2319PSA データシート(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4 5 6 7 8

データシートダウンロード