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PJM3407BPSA データシート(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

部品番号 PJM3407BPSA
部品情報  P Enhancement Field Effect Transistor
PDF  6 Pages
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メーカー  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
ホームページ  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3407BPSA データシート(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM3407BPSA
P Enhancement Field Effect Transistor
1 / 6
Features
VDS=-30V, ID=-4.1A
RDS(on)=38mΩ (Typ.)@VGS=-10V
High density cell design for ultra low RDS(ON)
Low gate charge
Applications
Load Switch
SOT-23
1
2
Gate
Source
1. Gate 2.Source 3.Drain
Marking: R7B
Schematic Diagram
Drain
3
Absolute Maximum Ratings
Ratings at TA =25℃ unless otherwise specified.
Parameter
Symbol
Value
Units
Drain-Source Voltage
-VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
-ID
4.1
A
Power Dissipation
PD
0.9
W
Junction and Storage Temperature Range
TJ, TSTG
150, -55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Maximum Junction-to-Ambient Note1
RθJA
139
°C/W
www.pingjingsemi.com
Revision：1.0 Jun-2019
Battery protection


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