PJM3407PSC datasheet(2/6 Pages) PJSEMI

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PJM3407PSC

P-Channel Power MOSFET

2 / 6

Electrical Characteristics (TC=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min.

Typ.

Max. Units

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, ID=-

250µA

Drain to Source Leakage Current

-IDSS

VDS =-

30V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±

20V, VDS = 0V

±100

Gate threshold voltage Note2

-VGS(th)

VDS =VGS, ID =-250µA

Drain-source on-resistance Note2

RDS(on)

VGS =-

10V, ID =-4.1A

mΩ

VGS =-

4.5V, ID =-3A

mΩ

Forward tran

sconductance Note2

gFS

VDS =-5V, ID =-

Dynamic characteristics

Input Capacitance

Ciss

VDS = -

15V,VGS = 0V,f=1MHz

700

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

Switching Characteristics

Turn-on delay time

td(on)

VDS=-15V,

VGS=-

10V，RGEN =3Ω,

RL =

3.6Ω,

8.6

Turn-on rise time

Turn-off delay time

td(off)

28.2

Turn-off fall time

Total gate charge

VDD =-

15V,VGS =-10V,ID =-4A

13.5

Gate-source charge

Qgs

3.1

Gate-drain charge

Qgd

Source-Drain Diode characteristics

Diode Forward voltage

-VDS

VGS =0V, IS=-

1.2

5.5

1.6

www.pingjingsemi.com

Revision：1.

0 Jun-2019

Notes:

Surface mounted on FR4 board，t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

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