2SC2873SQ datasheet(1/3 Pages) PJSEMI

部品番号	2SC2873SQ

部品情報	NPN Transistor

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

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1 / 3 page

2SC

2873SQ

NPN Transistor

1 / 3

www.pingjingsemi.com

Revision：1.0 Feb-2019

Features

⚫

Low Saturation Voltage

⚫

High Speed Switching Time

⚫

As Complementary Type of the PNP Transistor

2SA1213SQ is Recommended.

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

50

V

Collector Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

2

A

Power Dissipation

PD

500

250

°C/W

Junction Temperature

TJ

150

TSTG

-55 to 150

°C

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

O

Y

HFE

70

120

40

-

40

140

240

40

Collector Base Cutoff Current

at VCB = 50 V

ICBO

-

0.1

μA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

-

0.1

μA

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

50

-

V

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

50

-

V

Emitter Base Breakdown Voltage

at IE = 100 μA

V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at IC = 1 A, IB = 50 mA

VCE(sat)

-

0.5

V

Transition Frequency

at VCE = 2 V, IC = 0.5 A

fT

-

120

-

MHz

Collector Output Capacitance

at VCB = 10 V, IE = 0, f = 1MHz

Cob

-

30

-

pF

SOT-89

1. Base 2. Collector 3.Emitter

Marking: O: MX

Y: MY

20

-

Storage Temperature Range

Maximum Junction-to-Ambient

RθJA

°C

mW

Base Emitter Saturation Voltage

at IC = 1 A, IB = 50 mA

VBE(sat)

-

1.2

V

DC Current Gain

at VCE = 2 V, IC = 500 mA

at VCE = 2 V, IC = 2 A

Current Gain Group

Unit

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