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2SD882SQ データシート(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2SD882SQ データシート(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 3 page ![]() 2SD882SQ Silicon NPN Power Transistor www.pingjingsemi.com 2 / 3 Revision:1.0 May-2018 Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 2 V, IC = 20 mA at VCE = 2 V, IC = 1 A Current Gain Group R Q P E hFE hFE hFE hFE hFE 30 60 100 160 200 - - - - - - 120 200 320 400 - - - - - Collector Base Cutoff Current at VCB = 30 V ICBO - - 1 µA Emitter Base Cutoff Current at VEB = 3 V IEBO - - 1 µA Collector Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A VCE(sat) - - 0.5 V Base Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A VBE(sat) - - 2 V Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A fT - 90 - MHz Output Capacitance at VCB = 10 V, f = 1 MHz Cob - 45 - pF Typical Characteristic Curves DC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 1000 100 10 1 0.001 0.01 0.03 0.1 0.3 1 10 I C-Collector Current-A COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4 8 12 16 VCE-Collector to Emit o ter Voltage-V 0 0.4 0.8 1.2 1.6 2.0 20 I B=1mA 2 3 4 5 6 7 8 9 10 Pulse Test 300 30 60 6 3 0.003 3 0.1 0.3 0.6 1 3 VCE=2.0V Pulse Test h FE VBE I C-Collector Current-A BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 0.03 0.003 0.01 0.003 VBE(sat) 0.1 0.06 0.3 0.6 VCE(sat) 10 10 0.01 0.03 0.1 0.3 1 3 I C=10.IB Pulse Test 0.006 1 3 0.001 |
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