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BC817 データシート(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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BC817 データシート(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page ![]() BC817 thru BC818 NPN Silicon Epitaxial Planar Transistor 1 / 3 www.pingjingsemi.com Revis ion:1.0 Oct-2017 Features For switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. SOT-23 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Value Unit Collector Base Voltage BC817 BC818 VCBO 50 30 V Collector Emitter Voltage BC817 BC818 VCEO 45 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 300 mW Junction Temperature TJ 150 O C Storage Temperature Range TSTG - 55 to + 150 O C Electrical Characteristics (Ta=25℃) Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group -16 -25 -40 at VCE = 1 V, IC = 500 mA hFE hFE hFE hFE 100 160 250 40 - - - - 250 400 600 - - - - - Collector Base Cutoff Current at VCB = 20 V ICBO - - 100 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - - 100 nA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VCE(sat) - - 0.7 V Base Emitter Voltage at IC = 500 mA, VCE = 1 V VBE(on) - - 1.2 V Transition Frequency at VCE = 5 V, IC = 10 mA, f = 50 MHz fT 100 - - MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Cob - 5 - pF 1.B 2.E 3.C 1 2 3 |
同様の部品番号 - BC817 |
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同様の説明 - BC817 |
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