BCW66 datasheet(1/2 Pages) PJSEMI

部品番号	BCW66

部品情報	NPN Silicon Epitaxial Planar Transistor

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

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BCW66

NPN Silicon Epitaxial Planar Transistor

1 / 2

www.pingjingsemi.com

Revis

ion：1.0 Oct-2017

Features



For switching and amplifier applications

SOT-23

Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

75

V

Collector Emitter Voltage

VCEO

45

V

Emitter Base Voltage

VEBO

5

V

Power Dissipation

Ptot

300

mW

Collector Current

IC

600

mA

Junction Temperature

TJ

150

O

C

Storage Temperature Range

TSTG

- 55 to + 150

O

C

Electrical Characteristics (Ta=25℃)

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 10 V, IC = 0.1 mA

at VCE = 1 V, IC = 10 mA

at VCE = 1 V, IC = 100 mA

at VCE = 2 V, IC = 500 mA

hFE

50

110

160

60

-

400

-

Collector Emitter Cutoff Current

at VCE = 45 V

ICES

-

20

nA

Emitter Base Cutoff Current

at VEB = 4 V

IEBO

-

20

nA

Collector Emitter Breakdown Voltage

at IC = 10 µA

V(BR)CES

75

-

V

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

45

-

V

Emitter Base Breakdown Voltage

at IE = 10 µA

V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at IC = 100 mA, IB = 10 mA

at IC = 500 mA, IB = 50 mA

VCE(sat)

-

0.3

0.7

V

Base Emitter Saturation Voltage

at IC = 500 mA, IB = 50 mA

VBE(sat)

-

2

V

Transition Frequency

at VCE = 10 V, IC = 20 mA, f = 100 MHz

fT

100

-

MHz

Output Capacitance

at VCB = 10 V, f = 1 MHz

Cob

-

12

pF

Turn-on Time

at IB1 = IB2 = 15 mA

ton

-

100

ns

Turn-off Time at IC = 150 mA,RL = 150 Ω

toff

-

400

ns

1.B

2.E

3.C

1

2

3

同様の部品番号 - BCW66

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Zetex Semiconductors	BCW66	39Kb / 2P	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
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