BCX55SQ datasheet(2/4 Pages) PJSEMI

部品番号	BCX55SQ

部品情報	NPN Transistor

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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Revison：1.0

May - 2019

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Units

hFE

160

Collector Base Cutoff Current

at VCB = 30 V

ICBO

0.1

μA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

0.1

μA

Collector Base Breakdown Voltage

at IC = 100 µA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 10 µA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 0.5 A, IB = 50 mA

VCE(sat)

0.5

Base Emitter Voltage

at VCE = 2 V, IC = 0.5 A

VBE

Transition Frequency

at VCE = 5 V, IC = 10 mA, f = 100 MHz

130

MHz

BCX55SQ

NPN Transistor

DC Current Gain

at VCE = 2 V, IC = 5 mA

at VCE = 2 V, IC = 150 mA

at VCE = 2 V, IC = 500 mA

BCX55SQ - 10

BCX55SQ - 16

100

250

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