MMBT2222 datasheet(2/4 Pages) PJSEMI

部品番号	MMBT2222

部品情報	NPN Silicon Epitaxial Planar Transistor

PDF	4 Pages

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

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MMBT2222/MMBT2222A

NPN Silicon Epitaxial Planar Transistor

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www.pingjingsemi.com

Revis

ion：1.0 Oct-2017

Collector Emitter Breakdown Voltage

at IC = 10 mA

MMBT2222

MMBT2222A

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 10 µA

MMBT2222

MMBT2222A

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 150 mA, IB = 15 mA

MMBT2222

MMBT2222A

at IC = 500 mA, IB = 50 mA

MMBT2222

MMBT2222A

VCE(sat)

0.4

0.3

1.6

Base Emitter Saturation Voltage

at IC = 150 mA, IB = 15 mA

MMBT2222

MMBT2222A

at IC = 500 mA, IB = 50 mA

MMBT2222

MMBT2222A

VBE(sat)

0.6

1.3

1.2

2.6

Transition Frequency

at VCE = 20 V, -IE = 20 mA, f = 100 MHz

300

MHz

Collector Output Capacitance at VCB = 10 V, f = 100 KHz

Cob

Delay Time

at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA

Rise Time

at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA

Storage Time

at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA

tstg

225

Fall Time

at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA

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