MMBT8550-1.5A datasheet(1/3 Pages) PJSEMI

部品番号	MMBT8550-1.5A

部品情報	PNP Transistor

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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MMBT8550-1.5A

PNP Transistor

1 / 3

www.pingjingsemi.com

Revision：1.1 Oct-2017

Features



For Switching and Amplifier Applications.



Especially Suitable for AF-Driver Stages and Low

Power Output Stages.



As Complementary Type of the NPN Transistor

MMBT8050-1.5A is Recommended.

Absolute Maximum Ratings

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

40

V

Collector Emitter Voltage

-VCEO

25

V

Emitter Base Voltage

-VEBO

6

V

Collector Current

-IC

1.5

A

Power Dissipation

PD

350

mW

Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55 to 150

℃

Electrical Characteristics

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 1 V, -IC = 100 mA Current Gain Group

C

D

at -VCE = 1 V, -IC = 800 mA

HFE

100

160

40

-

250

400

-

Collector Base Cutoff Current

at -VCB = 35 V

-ICBO

-

100

nA

Emitter Base Cutoff Current

at -VEB = 6 V

-IEBO

-

100

nA

Collector Base Breakdown Voltage

at -IC = 100 μA

-

V(BR)CBO

40

-

V

Collector Emitter Breakdown Voltage

at -IC = 2 mA

-

V(BR)CEO

25

-

V

Emitter Base Breakdown Voltage

at -IE = 100 μA

-

V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage

at -IC = 800 mA, -IB = 80 mA

-

VCE(sat)

-

0.5

V

Base Emitter Saturation Voltage

at -IC = 800 mA, -IB = 80 mA

-

VBE(sat)

-

1.2

V

Base Emitter Voltage

at -VCE = 1 V, -IB = 10 mA

-

VBE(on)

-

1

V

Transition Frequency

at -VCE = 10 V, -IC = 50 mA

FT

120

-

MHz

SOT-23

(TO-236)

1.Base 2.Emitter 3.Collector

Marking: -C: X2

-D: Y2

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