FDP4D5N10C datasheet(1/2 Pages) ISC

部品番号	FDP4D5N10C

部品情報	isc N-Channel MOSFET Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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isc N-Channel MOSFET Transistor

FDP4D5N10C

·

FEATURES

·

With TO-220 packaging

·

High speed switching

·

Low gate input resistance

·

Standard level gate drive

·

Easy to use

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·

APPLICATIONS

·

Power supply

·

Switching applications

·

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

100

V

VGSS

Gate-Source Voltage

±

20

V

ID

Drain Current-Continuous;@Tc=25℃

Tc=100℃

128

91

A

IDM

Drain Current-Single Pulsed

512

A

PD

Total Dissipation

37.5

W

Tj

Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

·

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth(ch-c)

Channel-to-case thermal resistance

4.0

℃

/W

同様の部品番号 - FDP4D5N10C

メーカー	部品番号	データシート	部品情報
ON Semiconductor	FDP4D5N10C	1,023Kb / 8P	N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 128 A, 4.5 m廓 June, 2017, Rev. 1.0

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