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AS7C331MFT18A-85BC データシート(PDF) 16 Page - Alliance Semiconductor Corporation

部品番号 AS7C331MFT18A-85BC
部品情報  3.3V 1M x 18 Flow-through synchronous SRAM
PDF  19 Pages
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メーカー  ALSC [Alliance Semiconductor Corporation]
ホームページ  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C331MFT18A-85BC データシート(HTML) 16 Page - Alliance Semiconductor Corporation

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AS7C331MFT18A
1/21/05, v 1.4
Alliance Semiconductor
16 of 19
AC test conditions
Notes
1
For test conditions, see “AC Test Conditions”, Figures A, B, and C.
2
This parameter is measured with output load condition in Figure C.
3
This parameter is sampled but not 100% tested.
4tHZOE is less than tLZOE, and tHZC is less than tLZC at any given temperature and voltage.
5tCH is measured as high above VIH, and tCL is measured as low below VIL.
6
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times for all rising edges of CLK when chip is enabled.
7
Write refers to GWE, BWE, and BW[a,b]
.
8
Chip select refers to CE0, CE1, and CE2.
Z0 = 50Ω
DOUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
• Output load: For tLZC, tLZOE, tHZOE, tHZC, see Figure C. For all others, see Figure B.
• Input pulse level: GND to 3V. See Figure A.
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
• Input and output timing reference levels: 1.5V.
VL = 1.5V
for 3.3V I/O;
VL = VDDQ/2
for 2.5V I/O
Thevenin equivalent:
353
Ω/1538Ω
5 pF*
319
Ω/1667Ω
DOUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O



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