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AS7C331MFT18A-85BCN データシート(PDF) 6 Page - Alliance Semiconductor Corporation |
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AS7C331MFT18A-85BCN データシート(HTML) 6 Page - Alliance Semiconductor Corporation |
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6 / 19 page ![]() ® AS7C331MFT18A 1/21/05, v 1.4 Alliance Semiconductor 6 of 19 Write enable truth table (per byte) Key: X = don’t care; L = low; H = high; BWE, BWn = internal write signal Asynchronous Truth Table Notes: 1. X means “Don’t Care” 2. ZZ pin is pulled down internally 3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur. 4. Snooze mode means power down state of which stand-by current does not depend on cycle times 5. Deselected means power down state of which stand-by current depends on cycle times Burst sequence table Function GWE BWE BWa BWb Write all bytes (a, b) L XXX H LLL Write byte a H L L H Write byte b H L H L Read H HXX HLH H Operation ZZ OE I/O Status Snooze mode H X High-Z Read L L Dout LH High-Z Write L X Din, High-Z Deselected L X High-Z Interleaved burst address (LBO = 1) Linear burst address (LBO = 0) A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 1st Address 0 00 11 01 1 1st Address 0 00 11 0 1 1 2nd Address 0 10 01 11 0 2nd Address 0 11 01 1 0 0 3rd Address 1 01 10 00 1 3rd Address 1 01 10 0 0 1 4th Address 1 11 00 10 0 4th Address 1 11 00 1 1 0 |
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