Rev 1.0

07/07/17

NPN Transistor Bare Die ‐ MPSH10

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

3

V

Collector Current

50

mA

Collector Power Dissipation

225

mW

Junction & Storage Temperature

-55 to 150

°C

 

 

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PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

30

-

-

V

Collector-Emitter Breakdown Voltage

25

-

-

V

Emitter-Base Breakdown Voltage

3

-

-

V

-

-

100

nA

Collector Cut-off Current

1

-

-

1

µA

Emitter Cut-off Current

-

-

100

nA

ON CHARACTERISTICS

Forward-Current Transfer Ratio

60

-

-

-

Collector-Emitter Saturation Voltage

-

-

0.5

V

Base-Emitter On Voltage

-

-

0.95

V

SMALL-SIGNAL CHARACTERISTICS

1

Current-Gain Bandwidth Product

f = 100MHz

650

-

-

MHz

Collector-Base Capacitance

-

-

0.7

Common-Base Feedback

Capacitance

-

-

0.65

pF

Collector Base Time Constant

-

-

9

ps

 

 

Note 1: Not production testing in die form, characterized by chip design.

 

 

 

respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon

 

Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind.

 

approval of Silicon Supplies Ltd, if a failure of such components can reasonably be expected to cause the failure of that life support device or

system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human

body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.