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JS28F640P30B85 データシート(PDF) 45 Page - Intel Corporation |
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JS28F640P30B85 データシート(HTML) 45 Page - Intel Corporation |
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45 / 102 page  1-Gbit P30 Family Datasheet Intel StrataFlash® Embedded Memory (P30) April 2005 Order Number: 306666, Revision: 001 45 7.5 Program and Erase Characteristics Num Symbol Parameter VPPL VPPH Units Notes Min Typ Max Min Typ Max Conventional Word Programming W200 tPROG/W Program Time Single word - 90 200 - 85 190 µs 1 Single cell - 30 60 - 30 60 Buffered Programming W200 tPROG/W Program Time Single word - 90 200 - 85 190 µs 1 W251 tBUFF 32-word buffer - 440 880 - 340 680 Buffered Enhanced Factory Programming W451 tBEFP/W Program Single word n/a n/a n/a - 10 - µs 1,2 W452 tBEFP/ Setup BEFP Setup n/a n/a n/a 5 - - 1 Erasing and Suspending W500 tERS/PB Erase Time 32-KByte Parameter - 0.4 2.5 - 0.4 2.5 s 1 W501 tERS/MB 128-KByte Main - 1.2 4.0 - 1.0 4.0 W600 tSUSP/P Suspend Latency Program suspend - 20 25 - 20 25 µs W601 tSUSP/E Erase suspend - 20 25 - 20 25 Notes: 1. Typical values measured at TC = +25 °C and nominal voltages. Performance numbers are valid for all speed versions. Excludes system overhead. Sampled, but not 100% tested. 2. Averaged over entire device. |
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