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AS7C33512PFS18A データシート(PDF) 17 Page - Alliance Semiconductor Corporation

部品番号 AS7C33512PFS18A
部品情報  3.3V 512K x 18 pipeline burst synchronous SRAM
PDF  20 Pages
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メーカー  ALSC [Alliance Semiconductor Corporation]
ホームページ  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C33512PFS18A データシート(HTML) 17 Page - Alliance Semiconductor Corporation

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AS7C33512PFS18A
11/30/04; v.2.2
Alliance Semiconductor
17 of 20
AC test conditions
Z0 = 50Ω
DOUT
50
Ω
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
• Output load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC, see Figure C.
• Input pulse level: GND to 3V. See Figure A.
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
• Input and output timing reference levels: 1.5V.
VL = 1.5V
for 3.3V I/O;
= VDDQ/2
for 2.5V I/O
Notes:
1) For test conditions, see “AC Test Conditions”, Figures A, B, C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) tHZOE is less than tLZOE and tHZC is less than tLZC at any given temperature and voltage.
5) tCH measured HIGH above VIH and tCL measured as LOW below VIL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to GWE, BWE, BW[a,b].
8) Chip select refers to CE0, CE1, CE2.
353
Ω / 1538Ω
5 pF*
319
Ω / 1667Ω
DOUT
GND
Figure C: Output load (B)
*including scope
and jig capacitance
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O



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