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WSP8205 データシート(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号 WSP8205
部品情報  Dual N-Channel MOSFET
PDF  5 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP8205 データシート(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSP8205 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8205 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8205 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8205 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8205 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Sou
rce Voltage
±
12
V
ID@Tc=25℃
Continuous Drain Current, VGS @ 4.5V
1
6.0
A
ID@Tc=70℃
Continuous Drain Current, VGS @ 4.5V
1
5.2
A
IDM
Pulsed Drain Current
2
20
A
PD@TA=25℃
Total Power Dissipation
3
1.25
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-ambient
1
---
100
℃
/W
RθJC
Thermal Resistance Junction-Case
1
---
70
℃
/W
BVDSS
RDSON
ID
20V
2
0mΩ
6.0A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Absolute Maximum Ratings
Thermal Data
TSSOP
-8 Pin Configuration
Product Summery
WSP8205
Page 1
www.winsok.tw
Dec.2014
Dual N-Channel MOSFET
The WSP8205 is the highest performance trench
N-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The WSP8205 meet the RoHS and Green
Product requirement with full function reliability
approved.


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