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WST2002 データシート(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST2002 データシート(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page ![]() Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Sou rce Voltage ± 20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V 1 600 mA ID@TA=70℃ Continuous Drain Current, VGS @ 10V 1 550 mA IDM Pulsed Drain Current 2 0.8 A PD@TA=25℃ Total Power Dissipation 3 0. 15 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 625 ℃ /W BVDSS RDSON ID 30V 7.5Ω 600mA High-speed switching Green Device Available ESD Protected:2KV General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT -723 Pin Configuration Product Summery N-Ch MOSFET Page 1 www.winsok.tw Dec.2014 WST2002 The WST2002 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2002 meet the RoHS and Green Product requirement with full function reliability approved. G S D |
同様の部品番号 - WST2002 |
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同様の説明 - WST2002 |
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