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WST2005 データシート(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号 WST2005
部品情報  P-Ch MOSFET
PDF  6 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2005 データシート(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WST2005 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2005 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2005 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2005 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2005 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2005 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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consumption.
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Sou
rce Voltage
±
12
V
ID@Tc=25℃
Continuous Drain Current, VGS @ -4.5V
1
-
1.6
A
IDM
Pulsed Drain Current
2
-
5
A
PD@TA=25℃
Total Power Dissipation
3
350
mW
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
BVDSS
RDSON
ID
-20V
155mΩ
-1.6A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Features
Applications
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
A Switch and Battery Switch for Portable Devices
Load Switch
Absolute Maximum Ratings
SOT
-323 Pin Configuration
Product Summery
WST2005
P-Ch MOSFET
Page 1
www.winsok.tw
Dec.2014
General Description
The H is P-Channel enhancement mode power
MOSFET which is produced with high cell
density and DMOS trench technology .This
device particularly suits low voltage
applications, especially for battery powered
circuits, the tiny and thin outline saves PCB
are electrically identical.
-RoHS Compliant
D
D
G
G
S
1
1
2
2
3
3


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