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ISCN226N-2 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 ISCN226N-2
部品情報  isc Silicon NPN Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN226N-2 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon NPN Power Transistor
ISCN226N-2
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·
Good Linearity of hFE
·
High Current Capability
·
Wide Area of Safe Operation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Recommend for 60W audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Continuous base current
0.5
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
-65~150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃
/W


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