TN2501

DS20005948A-page 2

 2018 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Gate-to-Source Voltage ......................................................................................................................................... ±20V

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle)

Parameter

Sym.

Min. Typ. Max.

Unit

Conditions

Drain-to-Source Breakdown Voltage

18

—

—

V

Gate Threshold Voltage

0.3

—

1

V

—

—

–4

mV/°C

(Note 1)

Gate Body Leakage Current

—

—

100

nA

Zero-Gate Voltage Drain Current

—

—

10

µA

—

—

1

mA

(Note 1)

On-State Drain Current

250

600

—

mA

Static Drain-to-Source On-State Resistance

—

—

25

Ω

—

—

3.5

Ω

—

—

2.5

Ω

—

—

0.75

%/°C

(Note 1)

Note 1: Specification is obtained by characterization and is not 100% tested.