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STP11NM65N データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 STP11NM65N
部品情報  isc N-Channel MOSFET Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STP11NM65N データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
STP11NM65N
FEATURES
·
Drain Current –ID= 44A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 650V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.455Ω(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±
25
V
ID
Drain Current-Continuous
11
A
IDM
Drain Current-Single Pluse
44
A
PD
Total Dissipation @TC=25℃
110
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.14
℃
/W


同様の部品番号 - STP11NM65N

メーカー部品番号データシート部品情報
logo
STMicroelectronics		 STP11NM65N STMICROELECTRONICS-STP11NM65N Datasheet
1Mb / 21P		 N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages
15-Jul-2013
STP11NM65N STMICROELECTRONICS-STP11NM65N Datasheet
1Mb / 21P		 N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET
15-Jul-2013
logo
VBsemi Electronics Co.,...		 STP11NM65N VBSEMI-STP11NM65N Datasheet
1Mb / 8P		 N-Channel 650 V (D-S) MOSFET
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