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データシートサーチシステム |
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データシートサーチシステム |
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SIHFP048 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SIHFP048 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 iscN-Channel MOSFET Transistor SiHFP048 · FEATURES · Low drain-source on-resistance: RDS(ON) ≤18mΩ @VGS=10V · Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching Voltage Regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pulsed 290 A PD Total Dissipation @TC=25℃ 190 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.8 ℃ /W |
同様の部品番号 - SIHFP048 |
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同様の説明 - SIHFP048 |
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