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データシートサーチシステム |
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データシートサーチシステム |
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AOT412 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AOT412 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor AOT412 · FEATURES · Drain Current –ID= 60A@ TC=25℃ · Drain Source Voltage- : VDSS= 100V(Min) · Static Drain-Source On-Resistance : RDS(on) = 15.8mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Be suitable for synchronous rectification for server and general purpose applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ± 25 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1 ℃ /W |
同様の部品番号 - AOT412 |
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同様の説明 - AOT412 |
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