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ISCN235P データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 ISCN235P
部品情報  isc Silicon NPN Power Transistors
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN235P データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN235P Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN235P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
ISCN235P
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
:V(BR)CEO =60(Min)
·
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 8A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for relay drivers, high-speed inverters, converters,
and other general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
18
A
PC
Collector Power Dissipation
@ TC=25℃
70
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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