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データシートサーチシステム |
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データシートサーチシステム |
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ISCN253P データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN253P データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor ISCN253P DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -210V(Min) · Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -1A, IB= -0.05A) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for switching regulators, DC/DC converters and High frequency power amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -210 V VCEO Collector-Emitter Voltage -210 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -3.0 A ICM Collector Current-Peak -4.0 A PC Collector Power Dissipation@ Ta=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
同様の部品番号 - ISCN253P |
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同様の説明 - ISCN253P |
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