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APT5015BVR データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APT5015BVR データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor APT5015BVR FEATURES · Drain Current –ID=32A@ TC=25℃ · Drain Source Voltage- : VDSS=500V(Min) · Static Drain-Source On-Resistance : RDS(on) =0.15Ω(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 32 A IDM Drain Current-Single Pluse 128 A PD Total Dissipation @TC=25℃ 370 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.34 ℃ /W |
同様の部品番号 - APT5015BVR |
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同様の説明 - APT5015BVR |
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