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MS2092 データシート(PDF) 1 Page - Advanced Power Technology |
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MS2092 データシート(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() MS2092.PDF 2-10-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct Page 1 MS2092 RF & MICROWAVE TRANSISTORS DESCRIPTION DESCRIPTION The MS2092 is an internally matched, common base silicon bipolar device optimized pulsed application in the 600 – 750 MHz frequency range. Housed in the industry standard AMPAC ™ metal/ceramic package, this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. KEY FEATURES KEY FEATURES § Refractory/Gold Metallization § Internal Input Matching § Metal/Ceramic Hermetic Package § POUT = 440 W Min. § GP = 7.0 dB Gain APPLICATIONS/BENEFIT APPLICATIONS/BENEFITS S § Avionics Applications * Applies only to rated RF amplifier operation ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC 75 °C) 1500 W IC Device Current* 32.0 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature 200 °C TSTG Storage Temperature -65 to +200 °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 0.13 °C/W |
同様の部品番号 - MS2092 |
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同様の説明 - MS2092 |
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