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FTV05LUT データシート(PDF) 2 Page - First Silicon Co., Ltd |
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FTV05LUT データシート(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 4 page ![]() 2011. 12. 10 2/4 Revision No : 0 FTV05LUT ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF= 1.0 V Max. @ IF= 10 mA for all types) Device Device Marking VRWM (V) IR ( A) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) VC (V) @ IPP = 1 A (Note 3) VC Max Max Min mA Typ Max Max Per IEC61000−4−2 (Note 4) FTV05LUT D 5.0 1.0 5.4 1.0 0.5 0.9 9.8 Figures 1 and 2 See Below 2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃ 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000 −4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 |
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