LM0708 datasheet(1/6 Pages) LEIDITECH

部品番号	LM0708

部品情報	N-Channel Super Trench Power MOSFET

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メーカー	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

ホームページ	http://www.leiditech.com

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General Description

These N-Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast switching

applications.

Features

VDS

70V

ID

(at VGS=10V)

80A

RDS(ON) (at VGS=10V)

7mΩ(Typ)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

70

V

Gate-Source Voltage

VGS

±2

5

V

Drain Current-Continuous

TC=25°C

I

D

80

A

TC=100°C

I

D

51

A

Drain Current – Pulsed

IDM

3

60

A

Maximum Power Dissipation

P

D

176

W

Single pulse avalanche energy(1)

EAS

480

mJ

Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance junction-case

R

θJc

1.1

℃

/W

Thermal Resistance unction-to-Ambient

R

θJA

62

℃

/W

D

G

S

G

DS

TO220

S

D

G

TO263

100% UIS TESTED!

100% ∆Vds TESTED!

LM0708

Super Trench Power MOSFET

N-Channel

Rev :

www.leiditech.com

01.06.2018

1/6

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