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BAS21HT1G データシート(PDF) 2 Page - ON Semiconductor

部品番号 BAS21HT1G
部品情報  High Voltage Switching Diode
PDF  5 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
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BAS21HT1G データシート(HTML) 2 Page - ON Semiconductor

  BAS21HT1G Datasheet HTML 1Page - ON Semiconductor BAS21HT1G Datasheet HTML 2Page - ON Semiconductor BAS21HT1G Datasheet HTML 3Page - ON Semiconductor BAS21HT1G Datasheet HTML 4Page - ON Semiconductor BAS21HT1G Datasheet HTML 5Page - ON Semiconductor  
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
0.1
100
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
250
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V
2.0 k
820
W
0.1
mF
D.U.T.
VR
100
mH
0.1
mF
50
W OUTPUT
PULSE
GENERATOR
50
W INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit



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