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3N90L-TN3-R データシート(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3N90L-TN3-R データシート(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 5 page ![]() www.doingter.cn — — IS Max. Diode Forward Current ---- --- --- 2 A ISM Max. Pulsed Forward Current ---- --- --- 8 A VSD Source-Drain Diode Forward Voltage2 ID=2A --- --- 1.4 V trr Reverse Recovery Time IS=2A,VGS=0V diF/dt=100A/μs(Note 3) --- 400 --- ns Qrr Reverse Recovery Charge --- 1.6 --- nC Notes: Typical Characteristics: (TA=25℃ unless otherwise noted) 1, L= 105mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.doingter.cn — — !" # ! " #$ %#& ' 3 3N90L-TN3-R |
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