GaAs, HBT, MMIC, Low Phase Noise

Amplifier, 6 GHz to 14 GHz

Data Sheet

ADL8150

Rev. 0

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FEATURES

OP1dB: 18 dBm (typical at 7 GHz to 12 GHz)

Gain: 12 dB (typical at 7 GHz to 12 GHz)

OIP3: 30 dBm typical

Phase noise: −172 dBc/Hz at 10 kHz offset

Supply voltage: 5 V at 74 mA

6-lead, 2 mm × 2 mm LFCSP

APPLICATIONS

Military and space

Test instrumentation

Communications

FUNCTIONAL BLOCK DIAGRAM

2

1

3

6

5

4

GND

NC

NC

GND

Figure 1.

GENERAL DESCRIPTION

The ADL8150 is a self biased gallium arsenide (GaAs),

monolithic microwave integrated circuit (MMIC), heterojunction

bipolar transistor (HBT), low phase noise amplifier that operates

from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical

signal gain, 18 dBm output power at 1 dB gain compression

(OP1dB), and a typical output third-order intercept (OIP3) of

30 dBm. The amplifier requires 74 mA from a 5 V collector

supply voltage. The ADL8150 also features inputs and outputs

(I/Os) that are internally matched to 50 Ω, and facilitates

integration into multichip modules (MCMs).

Note that throughout this data sheet, multifunction pins, such

function is relevant.