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FDR54LED02 データシート(PDF) 1 Page - First Silicon Co., Ltd |
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FDR54LED02 データシート(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page  Schottky Barrier Diode FEATURES Extremely Fast Switching Speed Low Forward Voltage MARKING: L9 Maximum Ratings @Ta =25 ℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 30 V DC Blo ckin g Voltage VR 21 V Aver age Rectified Output Current IO 100 mA Forward continuous Current IF 200 mA Repetitiv e peak Forward Current IFRM 300 mA Non-repetitive Peak Forward Surge Current @t=8 3ms IFSM 600 mA Power Dissip ation Pd 200 mW Thermal resist ance,junction to ambient air RθJA 625 ℃/W Junction te mperature TJ 125 ℃ Storag e temperature range TSTG -65-150 ℃ Electrical Characteristics @Ta=25 ℃ Parameter Symbol Conditions Min Typ Max Unit Revers e Breakdown Voltage V (BR)R IR=100 μA 30 V VF1 IF=0.1mA 240 mV VF2 IF=1.0mA 320 mV VF3 IF=10mA 400 mV VF4 IF=30mA 500 mV For ward voltage VF5 IF=100mA 1000 mV Revers e current IR VR=25V 2.0 uA Revers e recovery time trr IF=10mA, IR=10mA to 1mA , RL=100 5.0 ns Capacitan ce between terminals CT VR=1V,f=1MHz 10 pF WBFBP-02C Ω SEMICONDUCTOR TECHNICAL DATA FDR54LED02 2020. 06. 16 1/4 Revision No : 1 |
同様の部品番号 - FDR54LED02 |
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同様の説明 - FDR54LED02 |
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