UTT20N06L-TN3-R datasheet(2/6 Pages) VBSEMI

2 / 6 page

Notes:

a. For design aid only; not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 µA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

2.0

3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

µA

VDS = 60 V, VGS = 0 V, TJ = 125 °C

VDS = 60 V, VGS = 0 V, TJ = 175 °C

250

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-State Resistanceb

rDS(on)

VGS = 10 V, ID = 15 A

0.025

0.031

VGS = 10 V, ID = 15 A, TJ = 125 °C

0.055

VGS = 10 V, ID = 15 A, TJ = 175 °C

0.069

VGS = 4.5 V, ID = 10 A

0.030

0.045

Forward Transconductanceb

gfs

VDS = 15 V, ID = 15 A

Dynamica

Input Capacitance

Ciss

VGS = 0 V, VDS = 25 V, f = 1 MHz

670

Output Capacitance

Coss

140

Reverse Transfer Capacitance

Crss

Total Gate Chargec

VDS = 30 V, VGS = 10 V, ID = 23 A

Gate-Source Chargec

Qgs

Gate-Drain Chargec

Qgd

Turn-On Delay Timec

td(on)

VDD = 30 V, RL = 1.3 Ω

ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω

815

Rise Timec

Turn-Off Delay Timec

td(off)

Fall Timec

Source-Drain Diode Ratings and Characteristics (TC = 25 °C)

Pulsed Current

ISM

Diode Forward Voltage

VSD

IF = 15 A, VGS = 0 V

1.0

1.5

Reverse Recovery Time

trr

IF = 15 A, di/dt = 100 A/µs

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UTT20N06L-TN3-R

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