IXFP12N65X2M datasheet(1/6 Pages) IXYS

部品番号	IXFP12N65X2M

部品情報	X2-Class HiperFETTM Power MOSFET

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メーカー	IXYS [IXYS Corporation]

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DS100750C(1/20)

X2-Class

HiperFETTM

Power MOSFET

N-Channel Enhancement Mode

IXFP12N65X2M

V

DSS

= 650V

I

D25

= 12A

R

DS(on) 

310m

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250µA

650

V

GS(th)

V

DS = VGS, ID = 250µA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10 A

T

J = 125C

500 A

R

DS(on)

V

GS = 10V, ID = 6A, Note 1

310 m

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25C to 150C

650

V

DGR

T

J

= 25C to 150C, R

GS = 1M

650

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C, Limited by T

JM

12

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

24

A

I

A

T

C = 25C

6

A

E

AS

T

C = 25C

300

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

50

V/ns

P

D

T

C = 25C

40

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

V

ISOL

50/60 Hz, 1 Minute

2500

V~

M

d

Mounting Torque

1.13 / 10

Nm/lb.in

Weight

2.5

g

(Electrically Isolated Tab)

G = Gate

D = Drain

S = Source

OVERMOLDED

TO-220

G

D S

Isolated

Tab

Features



International Standard Package



Plastic Overmolded Tab



High Voltage Package



Low R

DS(ON) and QG



Avalanche Rated



2500V~ Electrical Isolation



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

D

G

S

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