FMM140-004PL datasheet(1/2 Pages) IXYS

部品番号	FMM140-004PL

部品情報	Trench Power MOSFET

PDF	2 Pages

Scroll/Zoom	100%

メーカー	IXYS [IXYS Corporation]

ホームページ	http://www.ixys.com

Logo

1 / 2 page

1 - 2

Advanced Technical Information

IXYS reserves the right to change limits, test conditions and dimensions.

FMM 140-004PL

I

D25

= 140 A

V

DSS

= 40 V

R

DSon = 4.0

m

Ω

Trench Power MOSFET

logic level gate control

-Phaseleg Topology-

in ISOPLUS i4-PACTM

Features

•

trench MOSFET

- logic level gate control

- very low on state resistance R

DSon

- fast switching

- fast body diode

• ISOPLUS i4-PACTM package

- isolated back surface

- low coupling capacity between pins

and heatsink

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

- industry standard outline

- UL registered, E 72873

Applications

• automotive

- AC drives - starter generator

for 12/14V etc.

- choppers - replacing series resistors

for DC drives, heating etc.

- DC-DC converters

- electronic switches -replacing relays

and fuses

• power supplies

- DC-DC converters

- solar inverters

- converters for fuel cells

• battery supplied systems

- choppers or inverters for drives in

hand held tools

- battery chargers

MOSFET T1/T2

Symbol

Conditions

Maximum Ratings

V

DSS

T

VJ = 25°C to TVJmax

40

V

GS

±20

V

I

D25

T

C = 25°C

140

A

I

D90

T

C = 90°C

100

A

I

F25

(diode) T

C = 25°C

90

A

I

F90

(diode) T

C = 90°C

60

A

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

R

DSon

V

GS = 10 V; ID = 70 A

4.0

5.1 m

Ω

V

GSth

V

DS = 20 V; ID = 1 mA;

1.1

2

V

I

DSS

V

DS = 40 V; VGS = 0 V; TVJ =

25°C

1

µA

T

VJ = 125°C

0.1

mA

I

GSS

V

GS = ±20 V; VDS = 0 V

200

nA

Q

g

58

nC

Q

gs

11

nC

Q

gd

19

nC

t

d(on)

45

ns

t

r

120

ns

t

d(off)

200

ns

t

f

130

ns

V

F

(diode) I

F = 70 A; VGS = 0 V

1.1

1.6

V

t

rr

(diode) I

F = 20 A; -di/dt = 100 A/µs; VDS = 30 V

70

ns

R

thJC

1.3 K/W

R

thJS

tbd

K/W

V

GS= 5 V; VDS = 14 V; ID = 25 A

V

GS= 5 V; VDS = 30 V;

I

D = 25 A; RG = 10 Ω

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

1

5

T1

T2

1

5

3

4

2

同様の部品番号 - FMM140-004PL

メーカー	部品番号	データシート	部品情報
Rectron Semiconductor	FMM140	355Kb / 4P	LOW Vf SCHOTTKY BARRIER RECTIFIER

More results

同様の説明 - FMM140-004PL

メーカー	部品番号	データシート	部品情報
IXYS Corporation	FMM200-0075P	116Kb / 2P	Trench Power MOSFET
	FMM300-0055P	46Kb / 2P	Trench Power MOSFET
	IXUC160N075	55Kb / 2P	Trench Power MOSFET
	FMM200-004PL	46Kb / 2P	Trench Power MOSFET
	FMM65-015P	30Kb / 2P	Trench Power MOSFET
ON Semiconductor	NTMD4102PR2	47Kb / 4P	Trench Power MOSFET March, 2003 - Rev. 0
ZP Semiconductor	NTR4101P	232Kb / 2P	Trench Power MOSFET
ON Semiconductor	NTR4101P	81Kb / 5P	Trench Power MOSFET October, 2016 ??Rev. 12
	NTJS3157N	111Kb / 6P	Trench Power MOSFET January, 2013 ??Rev. 3
	NTJS3151P	73Kb / 5P	Trench Power MOSFET June, 2016 ??Rev. 4