LBAS21HT1G datasheet(1/3 Pages) LEIDITECH

部品番号	LBAS21HT1G

部品情報	HIGH VOLTAGE SWITCHING DIODE

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メーカー	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

ホームページ	http://www.leiditech.com

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HIGH VOLTAGE

SWITCHING DIODE

2

ANODE

1

CATHODE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

VR

250

Vdc

Peak Forward Current

I F

200

mAdc

Peak Forward Surge Current

IFM(surge)

625

mAdc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,*

PD

200

mW

TA = 25°C

Derate above 25°C

1.57

mW/°C

Thermal Resistance Junction to Ambient

RθJA

635

°C/W

Junction and Storage

TJ, Tstg

–55 to+150

°C

Temperature Range

*FR–5 Minimum Pad

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

I R

µAdc

(VR

(VR = 200 Vdc, TJ = 150°C)

–

100

Reverse Breakdown Voltage

V(BR)

250

–

Vdc

(IBR = 100

µAdc)

Forward Voltage

VF

mV

(IF = 100 mAdc)

–

1000

(IF = 200 mAdc)

–

1250

Diode Capacitance

CD

–

5.0

pF

(VR = 0, f = 1.0 MHz)

Reverse Recovery Time

trr

–50

ns

(IF = IR = 30 mAdc, RL = 100

Ω)

Device

Marking

Shipping

LBAS21HT1G

JS

3000/Tape&Reel

LBAS21HT3G

JS

10000/Tape&Reel

We declare that the material of product compliance with

RoHS requirements.

0.1

= 200 Vdc)

–

Rev.A 1/3

ORDERING INFORMATION

• S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

•

Pin Configuration

Rev : 01.06.2014

1/3

www.leiditech.com

Dimensions SOD-323

LBAS21HT1G

rf

IF =1mA

f = 100 MHz)

IF =10mA

f = 100 MHz)

IF =100mA

f = 100 MHz)

15

2.5

1.1

20

3.8

1.35

Ω

Forward resistance

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