UT60N03G-TN3-R datasheet(4/6 Pages) VBSEMI

部品番号	UT60N03G-TN3-R

部品情報	N-Channel 20-V (D-S)175 C MOSFET

PDF	6 Pages

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メーカー	VBSEMI [VBsemi Electronics Co.,Ltd]

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4 / 6 page

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.4

0.8

1.2

1.6

2.0

-50 -25

100 125 150 175

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

TJ - Junction Temperature (_C)

VSD - Source-to-Drain Voltage (V)

100

0.3

0.6

0.9

1.2

1.5

VGS = 4.5 V

ID = 20 A

TJ = 25_C

TJ = 150_C

THERMAL RATINGS

100

125

150

175

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

200

0.1

100

Limited

by rDS(on)

100

TC = 25_C

Single Pulse

Maximum Avalanche Drain Current

vs. Case Temperature

TC - Case Temperature (_C)

1 ms

10 ms

100 ms

10 ms

100 ms

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (sec)

0.1

0.01

10-4

10-3

10-2

10-1

100

600

0.2

0.1

Duty Cycle = 0.5

0.05

0.02

Single Pulse

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UT60N03G-TN3-R

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