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S-M2 データシート(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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S-M2 データシート(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page ![]() Features ● Low profile space ● Ideal for automated placement ● Glass passivated chip junctions ● Low forward voltage drop ● Low leakage current ● High forward surge capability ● High temperature soldering: 260℃/10 seconds at terminals Major Ratings and Characteristics Mechanical Date ● Case: JEDEC DO-214AC molded plastic body over glass passivated chip ● Terminals: Solder plated, solderable per JESD22-B102 ● Polarity: Laser band denotes cathode end IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A IR 5 μA VF 1.1 V Tj max. 150 °C y M (TA = 25 °C unless otherwise noted) Note 1: Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas. Electrical Characteristics (TA = 25 °C unless otherwise noted) Note 2: Pulse test:300μs pulse width,1% duty cycle. V 400 600 800 1000 V 70 140 280 420 560 700 j A A 1 30 100 200 Symbol IF(AV) 400 600 800 1000 V VRMS 35 VDC Items Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM 50 100 200 50 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Thermal resistance from junction to lead (1) Thermal resistance from junction to ambient (1) RθJL RθJA IFSM UNIT VF - 0.98 1.10 IF=1 A (2) –55 to +150 Max Operating junction and storage temperature range TJ, TSTG Type V ℃ / W ℃ / W ℃ 35 107 μA Tj=25℃ Tj=125℃ IR - CJ - pF 5 50 Items Instantaneous forward voltage Reverse current Symbol Min VR=VDC Typical junction capacitance Test conditions - 4.0 V ,1MHz - 15.0 UNIT ● AEC-Q101 qualified Available Schottky diode for automotive applications S-M1~S-M7 Rev : www.leiditech.com 01.06.2018 1/3 S-M1 S-M2 S-M3 S-M4 S-M5 S-M6 S-M7 |
同様の部品番号 - S-M2 |
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同様の説明 - S-M2 |
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