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UT4411G-S08-R データシート(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部品番号 UT4411G-S08-R
部品情報  P-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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メーカー  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
ホームページ  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT4411G-S08-R データシート(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-30
-33
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-30V, TJ=25℃
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-1.3
-1.65
-2.5
V
RDS(ON)
Drain-Source On Resistance
2
VGS=-10V,ID=-6.5A
---
30
35
mΩ
VGS=-4.5V,ID=-5A
---
53
65
GFS
Forward Transconductance
VDS=-5V, ID=-6.5A
14
---
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=-15V, VGS=0V, f=1MHz
---
660
---
pF
Coss
Output Capacitance
---
100
---
Crss
Reverse Transfer Capacitance
---
65
---
Switching Characteristics
,4
td(on)
Turn-On Delay Time
VDS=-15V, VGS=-10V
ID=-4A,RGEN=3Ω
---
7.5
---
ns
tr
Rise Time
---
5.5
---
ns
td(off)
Turn-Off Delay Time
---
19
---
ns
tf
Fall Time
---
7
---
ns
Qg
Total Gate Charge
VDS=-15V , VGS=-10V ,
ID=-6.5A
---
9.2
---
nC
Qgs
Gate-Source
Charge
---
1.6
---
nC
Qgd
Gate-Drain “Miller” Charge
---
2.2
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=-8A, TJ=25℃
---
---
-1.2
V
LS
Diode Forward Current
2
---
---
-8
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
UT4411G-S08-R



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