UTM6006L-S08-R datasheet(3/5 Pages) DOINGTER

部品番号	UTM6006L-S08-R

部品情報	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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メーカー	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Tota l Gate Charge

VGS=10V, VDS=30V,

ID=8A

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38.5

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Qgs

Ga te-Source Cha rge

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4.7

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Qgd

Ga te-Drain “Miller” Charge

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10.3

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Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage

VGS=0V,IS=8A,TJ=25℃

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Conti nuous Source Current

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Trr

Reverse Recovery Ti me

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Qrr

Reverse Recovery Cha rge

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Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

Vds Drain-Source Voltage (V)

Figure 1 Output Characteristics

Vgs Gate-Source Voltage (V)

Figure 2 Transfer Characteristics

TJ = 25°C, IF =8A

di/dt = 100A/μs

(Note3)

UTM 6006L-S08-R

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