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データシートサーチシステム |
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ISCN278N データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN278N データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCN278N DESCRIPTION · High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) · DC Current Gain— : hFE = 50-180(Min) @ IC= 1.0A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low power audio amplifier · Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃ /W |
同様の部品番号 - ISCN278N |
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同様の説明 - ISCN278N |
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