STB70NF3LLT4 datasheet(1/10 Pages) STMICROELECTRONICS

部品番号	STB70NF3LLT4

部品情報	N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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October 2003

NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P70NF3LL@ B70NF3LL@

STB70NF3LL

STP70NF3LL

N-CHANNEL 30V - 0.0075

Ω - 70A D²PAK/TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.0075 Ω @ 10 V

s

OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronis unique "Sin-

gle Feature Size™" strip-based process. The re-

sulting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

s

SWITCHING APPLICATIONS

Ordering Information

TYPE

VDSS

RDS(on)

ID

STB70NF3LL

STP70NF3LL

30 V

< 0.0095

Ω

< 0.0095

Ω

70 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STB70NF3LLT4

B70NF3LL@

D2PAK

TAPE & REEL

STP70NF3LL

P70NF3LL@

TO-220

TUBE

1

2

3

1

3

TO-220

D2PAK

TO-263

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•) Current limited by the package

(

••) Pulse width limited by safe operating area.

(1) ISD ≤70A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 35A, VDD = 25V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 16

V

ID(•)

Drain Current (continuous) at TC = 25°C

70

A

ID

Drain Current (continuous) at TC = 100°C

50

A

IDM(••)

Drain Current (pulsed)

280

A

Ptot

Total Dissipation at TC = 25°C

100

W

Derating Factor

0.67

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

EAS (2)

Single Pulse Avalanche Energy

500

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

同様の部品番号 - STB70NF3LLT4

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STB70NF3LLT4	465Kb / 13P	N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET 25-Jul-2006

More results

同様の説明 - STB70NF3LLT4

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STB14NF10	464Kb / 11P	N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET June 2002
	STB30NF10	455Kb / 11P	N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET May-2002
	STB70NF02L	46Kb / 6P	N-CHANNEL 20V - 0.006 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET 20-Jan-2000
	STB70NF03L	45Kb / 6P	N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET Apr-2000
	STB70NF3LL	45Kb / 6P	N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET May-2000
	STB90NF3LL	175Kb / 7P	N-CHANNEL 30V - 0.0048 ohm - 80A D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET Sep-2002
	STP70NF03L	255Kb / 9P	N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET Mar-2001
	STB70NF03L-1	405Kb / 11P	N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET Jun-2003
	STB70NF03L	463Kb / 15P	N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET™ II Power MOSFET July 2006 Rev 10
	STB70NF3LL	465Kb / 13P	N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET 25-Jul-2006

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