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ACE25AA160GFMLTH データシート(PDF) 40 Page - ACE Technology Co., LTD. |
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ACE25AA160GFMLTH データシート(HTML) 40 Page - ACE Technology Co., LTD. |
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40 / 46 page  ACE25AA160G Serial NOR Flash Memory 3.0V Multi I/O with 4KB,32KB & 64KB Sector/Block Erase VER 1.2 40 tRES1 CS# High To Standby Mode Without Electronic Signature Read 0.1 us tRES2 CS# High To Standby Mode With Electronic Signature Read 0.1 us tHSM CS# High To High Speed mode 0.1 us tSUS CS# High To Next Command After Suspend 2 us tRST_R CS# High To Next Command After Reset (from read) 20 us tRST_P CS# High To Next Command After Reset (from program) 20 us tRST_E CS# High To Next Command After Reset (from erase) 12 ms tW Write Status Register Cycle Time 60 500 ms tPP Page Programming Time 0.4 0.7 ms tSE Sector Erase Time 100 600 ms tBE Block Erase Time(32K Bytes/64K Bytes) 0.15/0.25 0.8/1.2 s tCE Chip Erase Time 6 20 s Max Value 4KB tSE with<50K cycles is 180ms and >50K & <100k cycles is 600ms. Max Value 32KB tBE with<50K cycles is 0.3s and >50K & <100k cycles is 0.8s. Max Value 64KB tBE with<50K cycles is 0.5s and >50K & <100k cycles is 1.2s. The value guaranteed by characterization, not 100% tested in production. Figure32. Serial Input Timing |
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