HM13005 datasheet(1/2 Pages) HMSEMI

部品番号	HM13005

部品情報	TO-220 Plastic-Encapsulate Transistors

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メーカー	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

ホームページ	http://www.hmsemi.com/

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1 / 2 page

TO-220 Plastic-Encapsulate Transistors

HM13005 TRANSISTOR( NPN )

FEATURES

Power switching applications

Maximum ratings (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current -Continuous

4

A

PC

Collector Power Dissipation

2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA, IE=0

700

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA, IB=0

400

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 0.1mA, IC=0

9

V

Collector cut-off current

ICBO

VCB= 700V, IE=0

100

uA

Collector cut-off current

ICEO

VCE= 400V, IB=0

100

uA

Emitter cut-off current

IEBO

VEB= 9V, IC=0

100

uA

DC current gain

hFE1

VCE= 5V, IC= 1A

10

60

hFE2

VCE= 5V, IC= 1mA

5

hFE3

VCE= 5V, IC=100mA

8

hFE4

VCE= 5V, IC=500mA

10

Collector-emitter saturation voltage

VCE(sat)

IC=2A,IB=0.5A

1.0

V

Base-emitter saturation voltage

VBE(sat)

IC=2A, IB=0.5A

1.5

V

Transition Frequency

fT

VCE=10V, IC=0.5A,f=1MHZ

5

MHZ

Fall time

tf

IC=0.5A,UI=9600

0.6

µs

Storage time

ts

1.8

6.6

µs

CLASSIFICATION OF hFE1

Rank

Range

10-15

15-20

20-25

25-30

30-35

35-40

40-45

45-50

50-55

55-60

1. BASE

2. COLLECTOR

3. EMITTER

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